R&D Emerging Memory Cell Engineer

Req Id: 112841

As a Cell Engineer within the Emerging Memory Group at Micron, will be responsible for developing and supporting new cell and selector materials for next generation non-volatile memory technologies.

In this position it is essential you have the ability to lead development projects across many functional groups such as unit process development, process integration, and design and product engineering.

Strong background in material science, solid state physics and device characterization is a requirement. Additionally, you must have a strong ability to learn the memory systems without significant assistance.

Responsibilities include but are not limited to:

• Responsible for leading technical investigation of materials systems for various emerging memory/selector systems such as resistance random access memories (RRAM), TFTs and non-ohmic devices
• Lead and coordinate a cross-functional team consisting of process engineers, material scientists, electrical characterization engineers, materials analysts, etc.
• Coordinate experimental design and analysis of emerging memory materials systems.
• Responsible for memory system development at the cell and product level and meeting performance and cost metrics for these systems.
• Investigate fundamental physics and solid state chemistry related to these devices and determine operation and failure mechanisms and improve device operation from fundamental principles.
• Investigate transport mechanisms in new device materials as well as study noise and variability sources.
• Deliver a successful emerging memory option into manufacturing with a cost structure and technical capabilities allowing the technology to replace existing memory technologies such as NAND.
• Develop a new compact cell model to enable large array statistical simulations and perform the necessary characterization for parameters extraction.
• Drive Read and Program Window analysis to enhance array performances.

Successful candidates must have:

• Strong understanding of solid state physics including transition metal oxides, chalcogenides, metallurgy, and ionic materials systems.
• Strong understanding of analytic and electrical methods for characterizing the above materials
• Strong understanding of device operation in memory systems including NAND, DRAM, PCM, storage class, and cross-point memories.
• TFT development experience is preferred

Education:

A PhD in Materials Science, Physics or Electrical engineering.